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  1. huis
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  5. K4A4G085WE-BIRC

Samsung Semiconductor - K4A4G085WE-BIRC

KEY Part #: K7359578

[25355stuks Voorraad]

    Onderdeel nommer:
    K4A4G085WE-BIRC
    vervaardiger:
    Samsung Semiconductor
    Gedetailleerde beskrywing:
    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.
    Manufacturer's standard lead time:
    In voorraad
    Raklewe:
    Een jaar
    Chip van:
    Hong Kong
    RoHS:
    Betalings metode:
    Gestuur manier:
    Gesinskategorieë:
    KEY Components Co, LTD is 'n verspreider van elektroniese komponente wat produkkategorieë insluitend: HBM Flarebolt, GDDR6, GDDR5, LPDDR5, DDR4, LPDDR3, HBM Aquabolt and SLC Nand ...
    Kompeterende voordeel:
    Ons spesialiseer in Samsung Semiconductor K4A4G085WE-BIRC elektroniese komponente. K4A4G085WE-BIRC kan binne 24 uur na bestelling gestuur word. Indien u enige eise vir K4A4G085WE-BIRC het, moet u 'n kwotasieversoek hier of stuur vir ons 'n e-pos: rfq@key-components.com
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A4G085WE-BIRC Produkkenmerke

    Onderdeel nommer : K4A4G085WE-BIRC
    vervaardiger : Samsung Semiconductor
    beskrywing : 4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA
    reeks : DDR4
    digtheid : 4 Gb
    Org. : 512M x 8
    spoed : 2400 Mbps
    Spanning : 1.2 V
    Temp. : -40 ~ 95 °C
    pakket : 78FBGA
    produk Status : Mass Production

    Jongste nuus

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    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    5G and Memory - from Connected Thinking to Connected Living
    The future of NAND technology
    Mass Production of Fifth-Generation V-NAND has Started
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    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
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    Speed for the next generation of mobile devices
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
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