Vishay Semiconductor Diodes Division - B80C800G-E4/51

KEY Part #: K6539895

B80C800G-E4/51 Pryse (USD) [158510stuks Voorraad]

  • 1 pcs$0.23334
  • 3,000 pcs$0.06743

Onderdeel nommer:
B80C800G-E4/51
vervaardiger:
Vishay Semiconductor Diodes Division
Gedetailleerde beskrywing:
BRIDGE RECT 1P 125V 900MA WOG. Bridge Rectifiers 0.9 Amp 125 Volt
Manufacturer's standard lead time:
In voorraad
Raklewe:
Een jaar
Chip van:
Hong Kong
RoHS:
Betalings metode:
Gestuur manier:
Gesinskategorieë:
KEY Components Co, LTD is 'n verspreider van elektroniese komponente wat produkkategorieë insluitend: Transistors - Bipolêr (BJT) - Enkel, voor-bevooroo, Transistors - Bipolêr (BJT) - Enkel, Diodes - gelykriglyne, Transistors - Spesiale doel, Diodes - Zener - Arrays, Transistors - IGBT's - Enkel, Diodes - Veranderlike kapasiteit (Varicaps, Varact and Transistors - Bipolêr (BJT) - RF ...
Kompeterende voordeel:
Ons spesialiseer in Vishay Semiconductor Diodes Division B80C800G-E4/51 elektroniese komponente. B80C800G-E4/51 kan binne 24 uur na bestelling gestuur word. Indien u enige eise vir B80C800G-E4/51 het, moet u 'n kwotasieversoek hier of stuur vir ons 'n e-pos: rfq@key-components.com
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

B80C800G-E4/51 Produkkenmerke

Onderdeel nommer : B80C800G-E4/51
vervaardiger : Vishay Semiconductor Diodes Division
beskrywing : BRIDGE RECT 1P 125V 900MA WOG
reeks : -
Deelstatus : Active
Diode tipe : Single Phase
tegnologie : Standard
Spanning - Peak Reverse (Max) : 125V
Huidige - Gemiddelde gelyk (Io) : 900mA
Spanning - vorentoe (Vf) (Max) @ As : 1V @ 900mA
Stroom - omgekeerde lekkasie @ Vr : 10µA @ 125V
Werkstemperatuur : -40°C ~ 125°C (TJ)
Monteringstipe : Through Hole
Pakket / saak : 4-Circular, WOG
Verskaffer toestelpakket : WOG

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