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  1. huis
  2. produkte
  3. DRAM
  4. LPDDR4
  5. K4FBE3D4HM-GHCL

Samsung Semiconductor - K4FBE3D4HM-GHCL

KEY Part #: K7359775

[18364stuks Voorraad]

    Onderdeel nommer:
    K4FBE3D4HM-GHCL
    vervaardiger:
    Samsung Semiconductor
    Gedetailleerde beskrywing:
    32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.
    Manufacturer's standard lead time:
    In voorraad
    Raklewe:
    Een jaar
    Chip van:
    Hong Kong
    RoHS:
    Betalings metode:
    Gestuur manier:
    Gesinskategorieë:
    KEY Components Co, LTD is 'n verspreider van elektroniese komponente wat produkkategorieë insluitend: LPDDR5, LPDDR4X, GDDR6, SLC Nand, GDDR5, MODULE, HBM Flarebolt and HBM Aquabolt ...
    Kompeterende voordeel:
    Ons spesialiseer in Samsung Semiconductor K4FBE3D4HM-GHCL elektroniese komponente. K4FBE3D4HM-GHCL kan binne 24 uur na bestelling gestuur word. Indien u enige eise vir K4FBE3D4HM-GHCL het, moet u 'n kwotasieversoek hier of stuur vir ons 'n e-pos: rfq@key-components.com
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4FBE3D4HM-GHCL Produkkenmerke

    Onderdeel nommer : K4FBE3D4HM-GHCL
    vervaardiger : Samsung Semiconductor
    beskrywing : 32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production
    reeks : DDR3
    digtheid : 32 Gb
    Org. : x32
    spoed : 4266 Mbps
    Spanning : 1.8 / 1.1 / 1.1 V
    Temp. : -40 ~ 105 °C
    pakket : 200FBGA
    produk Status : Mass Production

    Jongste nuus

    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Unlocking the Power of Cloud Computing
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Inside the building blocks of the 5G future
    The Ultra-Low Latency SSD, Z-SSD
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
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