Everspin Technologies Serial SPI MRAMs
Everspin Technologies MR25H256 / MR25H10 /MRH25H128 / MR25H40 SPI Serial MRAM devices offer serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes.
Features
MR25H40:
4,194,304-bit magnetoresistive (MRAM) device organized as 524,288 words of 8 bitsNo write delaysUnlimited write enduranceData retention greater than 20 yearsAutomatic data protection on power lossFast, simple SPI interface with up to 40 MHz clock rate3.0 to 3.6 Volt power supply rangeLow current sleep modeIndustrial temperaturesAvailable in 8-pin DFN or 8-pin DFN Small Flag RoHS-compliant packagesDirect replacement for serial EEPROM, Flash, FeRAM
MR25H10:
1,048,576-bit magnetoresistive (MRAM) device organized as 131,072 words of 8 bitsSerial SPI MRAMOrganized as 131,072 words of 8 bitsSerial EEPROM and serial Flash compatible read/write timingNo write delaysUnlimited write enduranceData retention greater than 20 yearsAutomatic data protection on power lossFast, simple SPI interface with up to 40 MHz clock rate2.7 to 3.6V power supply range3μA sleep mode standby currentIndustrial, automotive temperaturesSmall footprint 8-pin DFN RoHS-compliant packageDirect replacement for serial EEPROM, Flash, FeRAM
4,194,304-bit magnetoresistive (MRAM) device organized as 524,288 words of 8 bitsNo write delaysUnlimited write enduranceData retention greater than 20 yearsAutomatic data protection on power lossFast, simple SPI interface with up to 40 MHz clock rate3.0 to 3.6 Volt power supply rangeLow current sleep modeIndustrial temperaturesAvailable in 8-pin DFN or 8-pin DFN Small Flag RoHS-compliant packagesDirect replacement for serial EEPROM, Flash, FeRAM
MR25H10:
1,048,576-bit magnetoresistive (MRAM) device organized as 131,072 words of 8 bitsSerial SPI MRAMOrganized as 131,072 words of 8 bitsSerial EEPROM and serial Flash compatible read/write timingNo write delaysUnlimited write enduranceData retention greater than 20 yearsAutomatic data protection on power lossFast, simple SPI interface with up to 40 MHz clock rate2.7 to 3.6V power supply range3μA sleep mode standby currentIndustrial, automotive temperaturesSmall footprint 8-pin DFN RoHS-compliant packageDirect replacement for serial EEPROM, Flash, FeRAM
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Everspin Technologies MR25H256 / MR25H10 / MR25H40 SPI Serial MRAM devices offer serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance
Date: 2016-10-04